smd type www.kexin.com.cn 1 diodes unit: mm silicon schottky diode BAT62 features low barrier diode for detectors up to ghz frequencies. absolute maximum ratings ta = 25 parameter symbol value unit reverse voltage v r 40 v forward current i f 20 ma total power dissipation, t s 85 p tot 100 mw junction temperature t j 150 storage temperature range t stg -55to+150 junction - ambient 1) r th ja 810 k/w junction - soldering point r th js 650 k/w note 1.package mounted on alumina 15 mm 16.7 mm 0.7 mm. electrical characteristics ta = 25 parameter symbol test condition min typ max unit reverse current i r v r =40v 10 a forward voltage i f i f = 2 ma 0.58 1 v diode capacitance c t f=1mhz;v r = 0 0.35 0.6 pf case capacitance c c 0.1 pf differential resistance r o v r = 0, f = 10 khz 225 k series inductance l s 2nh marking marking 62
|
